Profile
PhD research
At this study, the properties of synthetic diamond groining on natural diamond substrate by High Pressure High Temperature (HPHT) and Chemical Vapour Deposition (CVD) procedures are investigated after irradiated, using an ion free Transmission Electron Microscope (TEM) of 300 kV that has sufficient energy to displace carbon atoms from their lattice sites in diamond creating a large number of optical centers that have sharp zero phonon lines (ZPLs) in photoluminescence experiment (PL). These point defects have become a useful method for investigating the properties of diamonds. This procedure had played a main role in the understanding of the atomic structure of point defects in diamond semiconductors deep levels within its wide band gab (Eg). The study shows that the deep levels are responsible for the optical and electrical properties of the material. The optical properties of the current interest are those that are responsible for the colors of synthetic crystals that have been annealed under conditions of HPHT (gems). The electrical properties are also affected by the deep levels that trap carriers. The studying, using Photoluminescence (PL), Cathodoluminescence (CL) and Scanning Electron Microscopy (SEM) Techniques demonstrated that diamond has a highest quality semiconductors properties. For that, synthetic diamond generated a greatly renewed interest to develop the optoelectronic applications and devices that are unaffected by high temperature or by other adverse environmental conditions, because diamond has rare physical properties such as resistance to heat, radiation, and chemical reaction and metastable at room temperature and pressure. It is known as the hardest material on the earth. So diamond semiconductors used in high industrial purposes such as:
Nano- optoelectronic devices, Electrical Conductors, Heat Spreaders, Optical Windows, Cutting Tool and Polishing.
Table (1) Properties of Diamond and Other Semiconductors
|
Property
|
Material
|
|
Diamond
|
Silicon
|
GaAs
|
α- GaN
|
4H-SiC
|
|
Band Gap (eV)
|
5.47
|
1.1
|
1.4
|
3.4
|
3.3
|
|
Band Gap Nature
|
Indirect
|
indirect
|
Direct
|
Direct
|
Indirect
|
|
Thermal Conductivity
(W/cm K)
|
25
|
1.5
|
0.46
|
1.3
|
3.3
|
|
Carrier Mobility of Holes (cm2/V s)
|
1700
|
600
|
400
|
100
|
100
|
|
Carrier Mobility of Electron (cm2/V s)
|
2150
|
1400
|
8500
|
2000
|
900
|
|
Saturated e Velocity
(x 107 cm/s)
|
2.7
|
1.01
|
1.1
|
2.0
|
2.5
|
|
Breakdown Voltage
(x105 V/cm)
|
(50-200)
|
3
|
4.0
|
40
|
20
|
|
Dielectric Constant
|
5.7
|
11.8
|
12.5
|
8.9
|
-
|
Education
- 1986
Bachelor degree from Department of Physics Faculity of Science, KAU, مدينة جدة, المملكة العربية السعودية
- 1990
Master degree from Physics DepartmentFacutly of Science, KAU, جدة, المملكة العربية السعودية
- 2001
Master degree from Department of Mechanical andFaculy of Engineering, University of Manchester Insti, مدينة مانشستر, بريطانيا
- 2006
Doctorate degree from Department of H. H. Wills PhysFaculty of Science, UNIVERSITY of BRISTOL in ENGL, مدينة بريستول, بريطانيا
Employment
- 1986-1990
Professor Assistant, KAU, مدينة جدة, المملكة العربية السعودية
- 1990-2004
Lecturer, KAU, , المملكة العربية السعودية
- 2000-2001
Master of Philosophy , University of Manchester Institution Science and Technology (UMIST) , مدينة مانشستر, بريطانيا
Research Interests
To Invistigate The OPtical and Electronic Properties of crystal structure defects of Semiconductors Thin Films by:
(1) Transmission electron microscope (TEM)
(2) Scanning Electron Microscope (SEM)
(3) Cathodoluminescence (CL) devices
(5) Photoluminescence and Micro-Raman
Spectroscopy Techniques
Teaching experiences
__________________________________________________________________
(a) The courses as following:
(1) Phys. (!01)
(2) Phys. Thin Films and Technology (473)
(b) Laboratories:
(1) Phys. Lab (!01)
(2) Phys. Lab (102)
(3) Phys. Lab (104)
(4) Phys. Lab (311)
(5) Phys. Lab (312)
(6) Phys. Lab (374)
(c) ٍٍٍSupervised some of:
(1) Master Degree Students
(2) The First Year PhD
___________________________________________________________________________________
Scientific interests
Presentations: In National and International Conferences:
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ورقة عمل "الفيزياء في خدمة المجتمع" أ..حميدة درويش (قسم الفيزياء) يوم المهنة الأول (1416ه (1
2) [Characterizations o f Diamonds), Presentation in International PhD
Conference, Bristol, UK, p.26, UK, (2003)]
3) [Hamida MB Darwish, [Investigation of the Relationship between
Absorption and Emission in Optical Spectroscopy of Radiation-Induced
Centres in Diamond), International Diamond Conference, Oxford University, UK, (2005)]
Membership:
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1-Natural International Journal Of materials Science in (USA)
2- International LABMATE Magazine in UK (Ireland)
Publications:
__________________________________________________________________________
Publications:
[1] Hamida Mohammed Bakr Darwish: ( EXCEPTION FORCHARACTERIZATION OF DIFFERENT TYPES OF SYNTHETIC DIAMONDS BY LUMINESCENCEAND SPECTRO-MICROSCOPIES IN NANO SCALE Technology), The International Conference for Nanotechnology Industries of 21st. Century, King Abdullah Institute for Nanotechnology, Riyadh, KSA, (07/09/2009).
[2] Hamida Mohammed Bakr Darwiah: (Annealing Dependence of the Zero Phonon Lines (ZPLS) 3H, H3, NV0, NV-,and GR1 Spectra of HPHT N-doped Diamond using Photoluminescence (PL) and Cathodeluminescence (CL) Microscope Techniques), phonons2007@insp.jussieu.fr in France (15 /07/2007) To be Published).
[3] W. Steeds, H. M. B. Darwish, J. M. Hayes: (Investigation of the relationship between absorption and emission in optical spectroscopy of radiation-induced centres in diamond), Diamond Conference, Oxford, UK, (2005), (To be published).
[4] J. W. Steeds and H. M. B. Darwish: (Optical Centres that are Affected by Isotope Substantiation in 15N-doped and 13C/ 12C HPHT Diamond after Electron Irradiation and Subsequent Annealing), Diamond Conference, Oxford, UK, p.26, UK, (2005), (To be published).
[5] J. W. Steeds and Hamida MB Darwish: [Investigation of the relationship between absorption and emission in optical spectroscopy of radiation-induced centres in diamond), International Diamond Conference, Oxford University, UK, (2005)]
[6] H. M. B. Darwish, S. J. Charles, J. E. Butler, B. N. Feygelson, M. E. Newton, D. L. Carrol, J. W. Steeds, C. S. Yan, H.K. Mao & R. J. Hemley: (Characterization of Nitrogen Doped Chemical Vapor Deposited Single Crystal Diamond before and after High Pressure, High Temperature Annealing) Phys. Stat. Sol. (a), 201, 2473-2486, USA, (2004).
[7] W. Steeds, A. E. Mora, H. M. B. Darwish, J. M. Hayes. E. Butler and D. Fisher (PL and TEM Examination of Single Crystal Diamond Samples Annealed to High Temperatures), Diamond Conference, Warwick, UK, (2004).
[8] H. M. B. Darwish: (Characterizations o f Diamonds), Presentation in International Conference, Bristol, UK, p.26, UK, (2003)
[9] H. S. Soliman, N. El-Kadry, O. Gamjoum, M.M. El-Nahass and H. M. B. Darwiah, J. of Optics, Vol. 17, No. 2, P. 46-49, (1988)
Experience Keywords:
___________________________________________________________________
High Pressure High Temperature (HPHT (
Chemical Vapour Deposition (CVD (
Transmission Electron Microscope (TEM)
ٍٍScanning Electron Microscopy (SEM (
Photoluminescence (PL (
Cathodoluminescence (CL (
zero phonon lines (ZPLs (
Plan view TEM sample
Cross section TEM sample
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Courses
| Physics |
110 |
Phys B1 110 |
| Physics |
110 |
Phys D2 110 |
| Physics |
110 |
Phys H2 110 |
| Physics |
110 |
Phys J2 110 |
| Physics |
390 |
Phys SB 390 |